The Investigation of Optoelectronic Characteristics with SiGe/Si Heterostructure
碩士 === 大葉大學 === 電機工程學系 === 95 === In this study, reduction of dark current characteristics in the SiGe-based Metal-Semiconductor-Metal photodetectors (MSM-PD) with and without hydrogenated amorphous silicon (a-Si:H) and/or with silicon dioxide (SiO2) passivation layer will be discussed. The a-Si:H a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99506184857317001702 |