Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide
碩士 === 大葉大學 === 電機工程學系 === 95 === The liquid-phase-deposition (LPD) oxide has been grown on GaN substrate under room temperature by using an aqueous solution of supersaturated hydrofluosilicic acid (H2SiF6) and an aqueous solution of boric acid (H3BO3). In this study, the as-grown LPD samples were a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54884956603292809487 |