Strained Related Reliability Issues for CMOS Device of 65nmGeneration and Beyond

Strained Related Reliability Issues for CMOS Device of 65nmGeneration and Beyond

碩士 === 長庚大學 === 電子工程研究所 === 95 === In more recent years, various mobility-improvement technologies using process-induced local stress of devices have been evolved as a potential candidate for high speed and low power logic CMOS technologies as a result of the mobility enhancement in devices. To expl...

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Bibliographic Details
Main Authors:	Da-Cheng Huang, 黃大正
Other Authors:	Chao Sung Lai
Format:	Others
Language:	en_US
Published:	2007
Online Access:	http://ndltd.ncl.edu.tw/handle/33059689882271921157

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