Strained Related Reliability Issues for CMOS Device of 65nmGeneration and Beyond
碩士 === 長庚大學 === 電子工程研究所 === 95 === In more recent years, various mobility-improvement technologies using process-induced local stress of devices have been evolved as a potential candidate for high speed and low power logic CMOS technologies as a result of the mobility enhancement in devices. To expl...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33059689882271921157 |