The Analysis of Metastable Tungsten Oxide Based Resistance Random Access Memory
碩士 === 國立中正大學 === 物理所 === 95 === Resistance Random Access Memory (RRAM) has drawn much attention due to its fast access speed like SRAM, high-density storage like DRAM, and the non-volatile property like Flash. Moreover, the structure of RRAM is simple, and the process cost is very low. However, und...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62808012207447568167 |