| Summary: | 碩士 === 大同大學 === 光電工程研究所 === 94 === In this thesis, in-situ post-deposition N2O plasma treatment improved the electrical characteristics of silicon oxide, such as leakage current density and dielectric strength. The silicon oxide were prepared by plasma enhanced chemical vapor deposition at low temperature(~350℃). The dc offset voltage measured at a blocking capacitor in the RF power matching network was employed as a parameter for plasma treatment. When dc offset voltage was below 73 V, N2O plasma treatment improved the electrical characteristics of silicon oxide, being attributable to that oxygen atoms compensated the dangling bonds and Si-O bonds replaced the weak Si-H bonds in silicon oxide films. Furthermore, when dc offset voltage was over 73 V, excess nitrogen atoms incorporated in oxide bulk after N2O plasma treatment led to the deterioration of silicon oxide films.
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