The effect of plasma treatment for improving silicon oxide film
碩士 === 大同大學 === 光電工程研究所 === 94 === In this thesis, in-situ post-deposition N2O plasma treatment improved the electrical characteristics of silicon oxide, such as leakage current density and dielectric strength. The silicon oxide were prepared by plasma enhanced chemical vapor deposition at low tempe...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64201479955244040543 |