Study on the MOSFETs with Hf-Silicate Gate Dielectrics through Various Post Annealings
碩士 === 國立臺北科技大學 === 機電整合研究所 === 94 === As CMOS devices are scaled aggressively into nanometer regime, SiO2 gate dielectric is approaching its physical and electrical limits. The primary issue is the intolerably huge leakage current caused by the direct tunneling of carriers through the ultrathin oxi...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/upj6hp |