GATE LEAKAGE PARTITION MODEL FOR LOCATION OF TRAP GENERATION IN ULTRATHIN OXIDE/NITRIDE GATE STACK AND ITS IMPACT ON MOBILITY DEGRADATION
碩士 === 國立聯合大學 === 電子工程學系碩士班 === 94 === Aim of this thesis is to investigate the location of trap generation between source and drain using gate leakage partition model and the impact mobility degradation on PECVD oxide/nitride (O/N) gate stack. We provide a mathematical model to correlate the distor...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82987826726974556555 |