Development of HREC-TFT device
碩士 === 國立臺灣科技大學 === 電子工程系 === 93 === We have successfully used heat retaining layer enhanced crystallization technology when excimer laser annealing we can achieve that the fully lateral grain growth silicon island of 14um long. Then we combine the fully lateral grain growth silicon island and dual...
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| Format: | Others |
| Language: | zh-TW |
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2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88292433798810962699 |