Tunneling magnetoresistance of the Si(100)/Ta/Co/AlOx/Co/IrMn/Ta system and the external stress effect thereon
碩士 === 國立臺灣科技大學 === 機械工程系 === 94 === We insert AFM to tunnel structure as a pinning layer. This structure called spin valve tunneling magnetoresistance junction. Tunneling magnetoresistance is a sandwiched structure, which is similar to the giant magnetoresistance(GMR). Its main structure is FM / in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ds2852 |