Kinetics study and material analysis of metalorganic chemical vapor deposition copper films-Precursor: (hfac)CuI(COD)
碩士 === 國立臺灣科技大學 === 化學工程系 === 94 === Growth kinetics and material analysis of copper films with metalorganic chemical vapor deposition (MOCVD) reaction system using hexafluoroacetonate-Cu(I)-1,5-cyclooctadiene (hfac)CuI(COD) as the precursor was studied. In this study, the kinetic data of MOCVD Cu t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ygbv29 |