| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 94 === Growth kinetics and material analysis of copper films with metalorganic chemical vapor deposition (MOCVD) reaction system using hexafluoroacetonate-Cu(I)-1,5-cyclooctadiene (hfac)CuI(COD) as the precursor was studied. In this study, the kinetic data of MOCVD Cu thin films as a function of deposition temperature and partial pressure of precursor were investigated. In addition, the effect of different deposition temperatures on the surface morphology、crystal structure、microstructure and film electricity was discussed.
It was found that the growth rate of copper between 120~190℃was written surface reaction limited regime with the value of activation energy as 18.32KJ/mol. Above 190℃, growth rate was in the mass transfer limited regime with an activation energy of 0.652KJ/mol. Through the analysis on the growth kinetics, the kinetic model of chemical vapor deposition as follows:
-ra=k2Pa^2/(1+K1Pa)^2
where k2=6.96x106(nm*min-1*torr-2)，K1=324.54(torr-1)
When the deposition temperature was 190℃, the best copper film electricity was obtained. The electricity of copper film, deposited at 190℃ was better than that of the copper films of deposited at 140℃, because the former could grow the flatter and denser copper films, and stronger preferred orientation of Cu(111). As a result, this lowered electron scattering of grain boundary. The electricity of copper films deposited at 230℃ is worse than that of copper films deposited at 190℃, because the former had large voids in the films due to huge copper grains. Consequently, this caused higher surface electron scattering.
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