The Characteristics of MOS Devices with Nitrided Gate Oxide by Decoupling Plasma Nitridation
碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === To obtain high speed and low power consumption device, the gate oxide thickness shrinkage is a main stream in modern VLSI industry. In conventional DRAM process, n+ poly gate is used for pMOSFETs to save process steps and cost. However, it generally needs p-type...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79953340403459838440 |