Analysis of the Capacitance Behavior of Narrow-Channel FD SOI NMOS Device Considering the 3D Fringing Capacitances Using 3-D Simulation
碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === This thesis reports the analysis of the Gate-Source/Drain and Source/Drain-Gate capacitance behavior of narrow channel FD SOI NMOS Device considering the fringing capacitance. The first chapter introduces the characteristic of the SOI Device and the Mesa Iso...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42895815630262704875 |