Effects of Strain-Temperature Stress on MOS Capacitors with Ultra-thin Gate Oxides
碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. Based on the International Technology Roadmap for Semiconductor (ITRS), the equivalent oxide thickness (EOT) should be 0.6 nm in 2013. Although mini...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62957628933701474566 |