Investigation of Ultra-thin Gate Oxides Prepared by Anodization with Tensile Stress in Tilted Cathode Anodization System
碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === A simple technique to improve the quality and reliability of SiO2 as ultra-thin gate dielectrics by bending the silicon wafer during oxidation is proposed; this technique is based on the concept that the oxide grown on enlarged silicon lattice may have better pr...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61782216612464891455 |