Growth and Transport Properties of Indium Nitride Nanowires
碩士 === 國立臺灣大學 === 光電工程學研究所 === 94 === Because of high mobility and high saturation velocity, InN has, among the III-nitride semiconductors, become an attractive material for electronic devices of superior performance. The other hand, one-dimensional nanostructures, such as nanowires and nanobelts, h...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37697481408882939522 |