Nearly White Light Illumination from a GaN-Based Light Emitting Diode Integrated with a Porous SiO2 Layer
碩士 === 國立臺灣大學 === 光電工程學研究所 === 94 === In this research, we develop a nearly white light emitting device by integrating blue/green emission from a GaN based light emitting diode (LED) with red emission from a porous SiO2 layer. The porous SiO2 layer was fabricated by a novel process procedure to cre...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35634460086978286387 |
| Summary: | 碩士 === 國立臺灣大學 === 光電工程學研究所 === 94 === In this research, we develop a nearly white light emitting device by integrating blue/green emission from a GaN based light emitting diode (LED) with red emission from a porous SiO2 layer. The porous SiO2 layer was fabricated by a novel process procedure to create Si nanocrystals on top of the n-type GaN layer. Red light is generated from the metal-oxide-semiconductor (Ni/Au–SiO2 oxide-n-type GaN) structure due to the electron-hole recombination in the Si nanocrystals. The device shows a blue light emission at a low biased voltage and nearly white light emission (green and red colors) at a bias voltage between 14V and 16V. Our results show the potential of applying such an integrated structure to white light illumination.
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