Nearly White Light Illumination from a GaN-Based Light Emitting Diode Integrated with a Porous SiO2 Layer
碩士 === 國立臺灣大學 === 光電工程學研究所 === 94 === In this research, we develop a nearly white light emitting device by integrating blue/green emission from a GaN based light emitting diode (LED) with red emission from a porous SiO2 layer. The porous SiO2 layer was fabricated by a novel process procedure to cre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35634460086978286387 |