Modeling LPCVD for Improved Operation

• Main Authors: Te Yuan Chen, 陳德原
• Other Authors: Hsiao-Ping Huang
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/06774978675081899832

碩士 === 國立臺灣大學 === 化學工程學研究所 === 94 === This work presents a physical model to simulate the film deposition in a batch LPCVD (Low Pressure Chemical Vapor Deposition) reactor for DRAM processing. The objective is to use this model to set proper reacting temperatures for lower defective rate and the higher yield of the process. The reaction kinetics model is based on the literature result, and the parameters are modify by regression to fit experimental data. Two TEOS feed flow rates are considered: 380 sccm and 230 sccm. The process is simulated with different quantity of wafers, 100 pieces and 125 pieces. The simulation results are compared with the experimental date and we find that this model works well. Based on this model, suitable reacting temperature aimed to uniform deposition of films can be predicted individually under the operating conditions aforementioned. In proof of the applicability of this model, the simulation result is also applied to real operating data from different machine platform. The results show that this proposed model is suitable for simulating the film deposition in LPCVD reactor under various TEOS feed flow rate, wafer production rate and machine platform.