Buried-Gate Low-Noise Metamorphic High Electron Mobility Transistors
碩士 === 國立臺灣海洋大學 === 電機工程學系 === 94 === In this thesis, we probe into the characteristics of depletion-mode ��-doped In0.5Ga0.5As/In0.5Al0.5As metamorphic high electron mobility transistors (mHEMTs) with linearly-graded undoped InyAl1-yAs buffer layer grown by molecular beam epitaxy (MBE). We have suc...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26412782962565420632 |