Strained Si1-xGex alloy Studied by Raman Spectroscopy and Extended X-ray absorption fine structure
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 94 === The strained silicon grown on the silicon-germanium alloy (SiGe alloy) virtual substrate can promote the electric-mobility by changing growing condition, and the residue stress in SiGe alloy has strong influence on the electron mobility of the strained Si. Ther...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/49620053454042377971 |