Impacts of Process Variables on Local Strained MOSFETs
碩士 === 國立清華大學 === 電子工程研究所 === 94 === In this thesis, we simulated the local strained channel PMOS & NMOS by stress control techniques. Heavy mechanical stress was produced by deposition of a tensile SiN-capping layer after all the traditional device processes of NMOS, which results in the improv...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27618302601852206947 |