ZnO based TCL contact for GaN based LED applications
碩士 === 國立清華大學 === 電子工程研究所 === 94 === This thesis work demonstrated the high performance of a light emitting diode (LED) which is able to illuminate visible light at very high lumen (eg. 254 mcd); the LED is formed by five InGaN/GaN quantum wells and a high voltage enduring contacting structure which...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85723326999689826626 |