Structure and Composition Analysis of MBE Grown Ga2O3(Gd2O3) thin films on Si

碩士 === 國立清華大學 === 物理學系 === 94 === The current trend of Si CMOS scaling calls for replacing SiO2 with high k dielectrics in gate related applications. Excellent electrical properties and thermodynamic stability of the Ga2O3(Gd2O3)/GaAs hetero-structures are demonstrated in our previous work. Recently...

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Bibliographic Details
Main Authors: Mong-Chi Hang, 杭孟琦
Other Authors: J. Raynien Kwo
Format: Others
Language:en_US
Online Access:http://ndltd.ncl.edu.tw/handle/83228497211157629990