相變化記憶胞之模擬研究
碩士 === 國立清華大學 === 材料科學工程學系 === 94 === Phase-change random access memory is considered a potential challenger for conventional memories,Nevertheless,high reset current is the ultimate problem in developing high-density phase-change random access memory(PRAM). Therefore, Phase-change memory cell with...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90991750203302400552 |
| Summary: | 碩士 === 國立清華大學 === 材料科學工程學系 === 94 === Phase-change random access memory is considered a potential challenger for conventional memories,Nevertheless,high reset current is the ultimate problem in developing high-density phase-change random access memory(PRAM). Therefore, Phase-change memory cell with four different geometry configurations were studied by using ANSYS suit software.We can find the effect of geometry configurations and then find the best geometry structure.
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