Characterizations of GaN/AlN multilayers on a mesh patterned Si(111) grown by metal-organic chemical vapor deposition
博士 === 國立清華大學 === 材料科學工程學系 === 94 === A 300 x 300 micro-meter square crack-free GaN/AlN multilayers of 2 micrometer thick has been successfully grown on the Si(111) substrate patterned with SixNy or SiO2 meshes by MOCVD. The cathodoluminescence (CL) and Raman results show that the better quality of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15521410380206659047 |