Study of photoluminescence in GaN thin film
碩士 === 國立清華大學 === 光電工程研究所 === 94 === We excite GaN compound semiconductor by using the Ti: sapphire pulse laser as the pumping source so that we could observe the nonlinear absorption phenomenon, and hence the band structure of GaN. The wavelength of the Ti: sapphire pulse laser is 800 nm, unit peak...
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| Format: | Others |
| Language: | zh-TW |
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2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39446512865094138968 |