The Capacitance-Voltage Study of the GaN MOS Structurewith Surface Treatment Using Low Energy Ion Beam
碩士 === 國立中山大學 === 物理學系研究所 === 94 === In this study, we discussed the capacitance-voltage characteristics of the GaN MOS structure with surface treatment using low energy ion beam prior to the oxide deposition. We used the E-Beam evaporator which was equipped with the ion beam assisted deposition sys...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05841874252142224591 |