Investigation and Fabrication of Novel Nonvolatile SONOS-TFT Memory with Nano-wires Structure
碩士 === 國立中山大學 === 光電工程研究所 === 94 === The conventional floating gate NVSM will suffer some limitations for continued scaling of the device structure. Therefore, two approaches, the silicon-oxide-nitride-oxide-silicon (SONOS) and the nanocrystal nonvolatile memory devices, have been investigated to ov...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63170772849125833404 |