Electrical properties of metal contacts on n-type GaN with and without native oxides
碩士 === 國立彰化師範大學 === 光電科技研究所 === 94 === In this study, the effects of native oxides (i.e., GaOX) formed at n-type Gallinm nitride (GaN) surfaces on the electrical properties of metal/n-type GaN samples were investigated. Experiments and simulations indicate that the main impediment to the formation o...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69765315808523095906 |