Effects of nitrogen-vacancy-related defects on optical and electrical properties of heavily Mg-doped GaN films
碩士 === 國立彰化師範大學 === 光電科技研究所 === 94 === We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS), x-ray photoelectron spectroscopy (XPS), and secondary-ion-mass spectroscopy (SIMS) measurements to study the effects of nitrogen-related defects on optical and electrical prop...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15466132004323546009 |