Study of back-gated carbon nanotube transistors
碩士 === 國立中央大學 === 機械工程研究所 === 94 === In this paper, we fabricated the back-gated carbon nanotube field effect transistors(CNT-FETs). Combining with the semiconductor fabrication techniques, we defined the pattern of devices by photolithography, and then we in-situ grew lateral CNTs as channel of tr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21209664979018884495 |