Implementation of Ka-Band and V-Band Low Noise Amplifier and Broadband Amplifier
碩士 === 國立中央大學 === 電機工程研究所 === 94 === The thesis focuses on the millimeter wave receiver front-end circuit designs, which include the low noise amplifiers in V band. The circuits are fabricated by WIN 0.15 um pHEMT and TSMC 0.18 um CMOS process. Chips designed in this thesis include the low noise amp...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78945721249445329472 |