Fabrication and Analysis of High speed InP Heterojunction Bipolar Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 94 === Abstract The work is aimed for InGaAs/InP double heterojunction bipolar transistors (DHBTs) with high cut-off frequency and high breakdown voltage. The devices are fabricated by an etch-back process, which greatly enhances the yield of small devices. Self-aligned...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9nv3yv |