Transparent thin film transistors fabricated by amorphous InGaZnO4 thin films
碩士 === 國立交通大學 === 電子物理系所 === 94 === In this thesis, we study the transparent thin film transistors fabricated by amorphous InGaZnO4 (a-IGZO) thin films. The Hall measurements indicate that the carrier concentration of a-IGZO film is between 1019~1021 cm-3, resistivity ρ is around 10-3 (Ω-cm), and el...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33645187712147492214 |