Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors

碩士 === 國立交通大學 === 電子工程系所 === 94 === According to the fundamental theory of the channel backscattering, a physically based analytic model is established in the kBT layer at the peak of the source-channel barrier. By using the 1-D Schrödinger-Poisson simulation and the evaluations of the underlying di...

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Main Authors:	Shih-Guei Yan, 顏士貴
Other Authors:	Ming-Jer Chen
Format:	Others
Language:	en_US
Published:	2006
Online Access:	http://ndltd.ncl.edu.tw/handle/39521922351688435332

id	ndltd-TW-094NCTU5428110
record_format	oai_dc
spelling	ndltd-TW-094NCTU54281102016-05-27T04:18:36Z http://ndltd.ncl.edu.tw/handle/39521922351688435332 Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors 超薄雙閘極金氧半場效電晶體與矽奈米線電晶體涵蓋通道背向散射效應之物理解析模型 Shih-Guei Yan 顏士貴碩士國立交通大學電子工程系所 94 According to the fundamental theory of the channel backscattering, a physically based analytic model is established in the kBT layer at the peak of the source-channel barrier. By using the 1-D Schrödinger-Poisson simulation and the evaluations of the underlying different structures, the validity of the model can be corroborated. Simulation for the forward and backward flux relation under different conditions by the Monte Carlo technique can also confirm the validity of the model. In this thesis, a series of physically-based analytic models applied to ultra-thin double-gate MOSFETs and silicon nanowire transistors are analyzed and testified. The reasonable results are achieved. Ming-Jer Chen 陳明哲 2006 學位論文 ; thesis 40 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 國立交通大學 === 電子工程系所 === 94 === According to the fundamental theory of the channel backscattering, a physically based analytic model is established in the kBT layer at the peak of the source-channel barrier. By using the 1-D Schrödinger-Poisson simulation and the evaluations of the underlying different structures, the validity of the model can be corroborated. Simulation for the forward and backward flux relation under different conditions by the Monte Carlo technique can also confirm the validity of the model. In this thesis, a series of physically-based analytic models applied to ultra-thin double-gate MOSFETs and silicon nanowire transistors are analyzed and testified. The reasonable results are achieved.
author2	Ming-Jer Chen
author_facet	Ming-Jer Chen Shih-Guei Yan 顏士貴
author	Shih-Guei Yan 顏士貴
spellingShingle	Shih-Guei Yan 顏士貴 Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors
author_sort	Shih-Guei Yan
title	Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors
title_short	Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors
title_full	Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors
title_fullStr	Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors
title_full_unstemmed	Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors
title_sort	channel backscattering based analytic model for double-gate mosfets and silicon nanowire transistors
publishDate	2006
url	http://ndltd.ncl.edu.tw/handle/39521922351688435332
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Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors

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