Channel Backscattering Based Analytic Model for Double-Gate MOSFETs and Silicon Nanowire Transistors
碩士 === 國立交通大學 === 電子工程系所 === 94 === According to the fundamental theory of the channel backscattering, a physically based analytic model is established in the kBT layer at the peak of the source-channel barrier. By using the 1-D Schrödinger-Poisson simulation and the evaluations of the underlying di...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39521922351688435332 |