Study on the Atomic-sized Traps in Advanced Devices
博士 === 國立交通大學 === 電子工程系所 === 94 === The continuous shrinking in the feature dimensions of metal-oxide -semiconductor field-effect transistors (MOSFETs) brings into prominence the single electron effects, among which the most important is the Random Telegraph Signals (RTS). Studies on noise from indi...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/57327345660321419099 |