Studies Of High Performance Metal Gate Low Temperature Poly-Silicon Thin Film Transistor
碩士 === 國立交通大學 === 電子工程系所 === 94 === We have integrated a Metal gate into Poly-Silicon (LTPS) thin-film transistors (TFTs) with high – κ gate dielectric. We use Ytterbium ( Yb , has the lowest work-function in Lanthanide series metal≒ 2.6 eV ) for NMOS. We get good TFT performance in NMOS, such as a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46266765725793289274 |