The study of varies sening layers on Re-FET and ISFET
碩士 === 國立交通大學 === 電子工程系所 === 94 === The ion-sensitive field effect transistors (ISFET) were first presented by P.Bergveld in 1970. They have different materials instead of the general metal/poli-Si gate of traditional MOS. As the unknown solution contacts the sensing material, specific ions would ac...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72145532031048688485 |