Application of Linear Regression to Effective Potential of Double-Gate and Silicon-on Insular Metal-Oxide-Semiconductor Field-Effect Transistors
碩士 === 國立交通大學 === 統計學研究所 === 94 === Within the next decade or so, it is expected that gate lengths will shrink to 45 nm or less in devices found in integrated circuits. Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular pote...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/38982876051079800904 |