A Study of Electroless Co(W,P) Thin Film as the Diffusion Barrier of Under Bump Metallurgy
碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === This work prepares electroless cobalt-tungsten-phosphorus (Co(W,P)) thin films to serve as the diffusion barrier of under bump metallurgy (UBM) for flip-chip Cu-ICs. The Si wafer pre-deposited with a Ti/Cu bi-layer to simulate the Cu-IC chips was adopted as the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90461366986860038532 |