Optoelectronic Characteristics and Structure Development of One- and Two-Dimensional Zinc Oxide Materials
博士 === 國立交通大學 === 材料科學與工程系所 === 94 === Zinc oxide (ZnO) has unique physical properties that make it a most promising material for optoelectronic device. The main reasons are a direct band gap of 3.3 eV and a large exciton binding energy (60 meV), which permits exciton recombination even above room t...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57464825229943960629 |