Optoelectronic Characteristics and Structure Development of One- and Two-Dimensional Zinc Oxide Materials

博士 === 國立交通大學 === 材料科學與工程系所 === 94 === Zinc oxide (ZnO) has unique physical properties that make it a most promising material for optoelectronic device. The main reasons are a direct band gap of 3.3 eV and a large exciton binding energy (60 meV), which permits exciton recombination even above room t...

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Bibliographic Details
Main Authors: Chin-Ching Lin, 林晉慶
Other Authors: San-Yuan Chen
Format: Others
Language:en_US
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/57464825229943960629