Effects of annealing on physical properties of ZnO films synthesized by ion beam sputtering－Focus on the application of the anode electrode of PLED

• Main Authors: Kuang-Ju Wang, 王光儒
• Other Authors: Yu-Hua Li
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/65724490839478465827

碩士 === 國立成功大學 === 光電科學與工程研究所 === 94 === ZnO films are deposited in glass by Ion-Beam Sputtering method, and the target is ZnO compound. In this research, we choose three methods to treat ZnO films, as follows: in-situ annealing, post-annealing in vacuum, and post-annealing in nitrogen atmosphere. When the ZnO films were treated, we investigated their physical properties, as follows: microstructure, electrical property, optical property and the composition of the film. We also use the treated films to be the anode of PLED devices, while the structure of PLED is ZnO/PEDOT:PSS/PF/Ca/Al. The experiment results show that the ZnO film treated with in-situ annealing will have a high c-axis orientation with rising temperature. We obtained a ZnO film which has low resistivity (ρ=7.2×10-3 ohm-cm) and high transmittance (83%) by holding the substrate temperature of 100 oC. The ZnO film was used to be the anode of a PLED device and have the best luminance efficiency 7.4 cd/A and the brightness is 26600 cd/m2. The ZnO film treated with post-annealing temperature of 100 oC in nitrogen atmosphere present the lowest resistivity (3.8×10-3 ohm-cm) and high transmittance (90%). The ZnO film was also fabricated to a PLED device and its luminance efficiency is 4.8 cd/A and the highest brightness (28000 cd/m2) in the ZnO series.