| Summary: | 碩士 === 國立成功大學 === 光電科學與工程研究所 === 94 === ZnO films are deposited in glass by Ion-Beam Sputtering method, and the target is ZnO compound.
In this research, we choose three methods to treat ZnO films, as follows: in-situ annealing, post-annealing in vacuum, and post-annealing in nitrogen atmosphere.
When the ZnO films were treated, we investigated their physical properties, as follows: microstructure, electrical property, optical property and the composition of the film.
We also use the treated films to be the anode of PLED devices, while the structure of PLED is ZnO/PEDOT:PSS/PF/Ca/Al.
The experiment results show that the ZnO film treated with in-situ annealing will have a high c-axis orientation with rising temperature.
We obtained a ZnO film which has low resistivity (ρ=7.2×10-3 ohm-cm) and high transmittance (83%) by holding the substrate temperature of 100 oC.
The ZnO film was used to be the anode of a PLED device and have the best luminance efficiency 7.4 cd/A and the brightness is 26600 cd/m2.
The ZnO film treated with post-annealing temperature of 100 oC in nitrogen atmosphere present the lowest resistivity (3.8×10-3 ohm-cm) and high transmittance (90%).
The ZnO film was also fabricated to a PLED device and its luminance efficiency is 4.8 cd/A and the highest brightness (28000 cd/m2) in the ZnO series.
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