| Summary: | 碩士 === 國立成功大學 === 光電科學與工程研究所 === 94 === Abstract
The experiment takes thermal evaporation method to synthesis nc-Si. First, we deposit nc-Si on different substrates. Second, we adjust the O2 pressure (4.8mTorr ~ 1atm) and the temperature (300oC ~ 1200oC) in annealing to affect the structure of QDs which is formed by the nc-Si. Then we use photoluminescence, PL, experiment and scanning electron microscope, SEM, to analyze samples。
We find that nc-Si which grown in this experiment doesn’t have much relatedness with the differences between substrates. Besides, we can tell from PL single to noise ratio that we can get the better sample no matter we fix O2 pressure when the annealing temperature is 600oC or control the O2 pressure at 100mTorr under the fixed annealing temperature.
After this, we can use low temperature PL technology to get that activation energy, Ea, of QDs is about 161meV. Finally, we propose the model of nc-Si on oxidation to explain the reason that why the PL lineshape doesn’t change when size of QDs has changed.
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