Photoluminescence studies on silicon nanostructure grown by thermal evaporation
碩士 === 國立成功大學 === 光電科學與工程研究所 === 94 === Abstract The experiment takes thermal evaporation method to synthesis nc-Si. First, we deposit nc-Si on different substrates. Second, we adjust the O2 pressure (4.8mTorr ~ 1atm) and the temperature (300oC ~ 1200oC) in annealing to affect the structure of QDs w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85528552693734436447 |